| 摘要 |
A resistive random access memory cell over a substrate includes a memory stack structure and a sidewall spacer. The memory stack structure is over the substrate and includes a first electrode layer, a second electrode layer, and a metal oxide layer between the first electrode layer and the second electrode layer. The metal oxide layer has a sidewall. The sidewall spacer is adjacent to the sidewall and has a composition including silicon, carbon, and nitrogen. |
