| 摘要 |
A four-mask process thin film transistor (TFT) array substrate and a method for fabricating the same is disclosed, which prevents a semiconductor tail from being formed. An open area is thus obtained and wavy noise is prevented from occurring. The method of fabricating a TFT array substrate comprises: forming a gate line, a gate electrode and a pad electrode on a substrate; sequentially depositing a gate insulation layer, a silicon layer and a metal layer on an entire surface of the substrate including the gate line; forming an open area in the pad electrode; forming a semiconductor layer, data line and source/drain electrodes by patterning the silicon layer and the metal layer; and forming a pixel electrode connected with the drain electrode and a transparent conductive layer connected with the pad electrode by depositing and patterning a transparent conductive material on the entire surface of the substrate including the data line, and simultaneously defining a channel region by separating the source and drain electrodes from each other. |
