| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for fabricating a bulk acoustic wave device comprising providing a growth substrate and growing a Group-III nitride epitaxial layer on the growth substrate. <P>SOLUTION: A first electrode 16 is deposited on an epitaxial layer 14. A carrier substrate 18 is provided and a combination of a growth substrate 12, the epitaxial layer 14 and the first metal electrode 16 is flip-chip-mounted on the carrier substrate 18. The growth substrate 12 is removed and a second electrode is deposited on the epitaxial layer 14 with the epitaxial layer 14 sandwiched between the first metal electrode 16 and the second metal electrode. A bulk acoustic wave device 10 comprises the first metal electrode 16 and second metal electrode, and the Group-III nitride epitaxial layer 14 sandwiched between the first metal electrode 16 and the second metal electrode. The carrier substrate 18 is included with the first metal electrode 16, the second metal electrode and the epitaxial layer 14 on the carrier substrate 18. <P>COPYRIGHT: (C)2013,JPO&INPIT |
