| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce stress caused by a light absorption film disposed in a lateral direction of a ridge part; to inhibit variations in horizontal divergence angle; and to achieve FFP (Far Field Pattern) characteristics with a stable horizontal divergence angle. <P>SOLUTION: A nitride semiconductor light-emitting device comprises: a first dielectric film 7 formed in both lateral directions and on both lateral faces of a ridge part 6a and having a thickness of the both side faces thicker in an upper part than a lower part; an absorption film 8 formed on the first dielectric film 7 in both lateral directions of the ridge part and in a region not overlapping an upper part of the lateral face of the ridge part of the first dielectric film 7 when viewed from above the lateral face of the ridge part 6a, for absorbing light from the active layer 4; and a second dielectric film 9 formed on the first dielectric film so as to cover the absorption film, and have a thickness thicker on an end of the ridge part side than an end on the side opposite to the ridge part and a thick film part with a forward mesa-shaped cross-section in a vertical direction with respect to the resonance direction. The ridge part has a forward mesa shape whose lateral face is inclined inwardly with respect to a top face of the first dielectric film. An end of the absorption film on the ridge side is formed closer to the ridge part than a boundary location on the outside of the thick film part of the second dielectric film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
