发明名称 |
Method And Structure For Compound Semiconductor Contact |
摘要 |
The present disclosure provides a buried channel semiconductor structure in which a crystallographic wet etch is used to tailor the profile of etched regions formed into a multilayered substrate which includes a compound semiconductor layer located atop a buried semiconductor channel material layer. The use of crystallographic wet etching on a compound semiconductor allows one to tailor the shape of a source recess region and a drain recess region formed into a multilayered substrate. This allows for the control of gate overlap/underlap. Also, the use of crystallographic wet etching on a compound semiconductor allows independent control of the length of an underlying buried semiconductor channel region.
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申请公布号 |
US2012261718(A1) |
申请公布日期 |
2012.10.18 |
申请号 |
US201113085511 |
申请日期 |
2011.04.13 |
申请人 |
SOSA CORTES NORMA E.;KIEWRA EDWARD W.;KOBAYASHI MASAHARU;SHIU KUEN-TING;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SOSA CORTES NORMA E.;KIEWRA EDWARD W.;KOBAYASHI MASAHARU;SHIU KUEN-TING |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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