| 摘要 |
The invention relates to a method for manufacturing an opto-microelectronic device from a first semiconductor substrate (10), including the production of at least one pixel electrode after transferring the first substrate (10) onto a second substrate (20), characterized in that it comprises: a first phase carried out prior to the transfer, and which includes: i) producing at least one pattern made of a sacrificial material in a layer formed at the surface of the first substrate (10), ii) laterally defining the pattern in the layer of the first substrate (10) by means of a border (212) made of a different defining material from the sacrificial material; a second phase carried out after the transfer, including replacing the pattern by the electrode including removing the sacrificial material of the pattern via selective etching configured so as to attack the sacrificial material and preserve the defining material without resorting to photolithography. |
