发明名称 REFERENCE CELL CIRCUIT AND RESISTANCE CHANGE NONVOLATILE MEMORY DEVICE USING SAME
摘要 A reference cell circuit equipped with: reference cells (201a, b) having a resistance change element that changes reversibly between a prescribed low-resistance state LR and a prescribed high-resistance state HR in response to the application of an electrical signal; a comparator (204) that compares the resistance values of the reference cells (201a, b); a pulse generation circuit (202) that generates an electrical signal for the purpose of setting the reference cells (201a, b) to LR or to HR; and a control circuit (206) that repeats an operation whereby the generated electrical signal is applied to the reference cell (201a, b) which corresponds to the comparison result from the comparator (204) and then a new electrical signal generated by the pulse generation circuit (202) is applied to the reference cell (201a, b) which corresponds to a new comparison result from the comparator (204), after which the control circuit controls an operation whereby the reference cell (201a, b) which corresponds to the final comparison result of the comparator (204) is connected to an output terminal (208).
申请公布号 WO2012140903(A1) 申请公布日期 2012.10.18
申请号 WO2012JP02559 申请日期 2012.04.12
申请人 PANASONIC CORPORATION;SHIMAKAWA, KAZUHIKO 发明人 SHIMAKAWA, KAZUHIKO
分类号 G11C13/00 主分类号 G11C13/00
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