发明名称 |
INTEGRATED CIRCUIT INTERCONNECT STRUCTURE |
摘要 |
An integrated circuit (IC) interconnect structure that includes a first via positioned in a dielectric and coupled to a high current device at one end, and a buffer metal segment positioned in a dielectric and coupled to the first via at an opposite end thereof. The buffer metal segment includes a plurality of electrically insulating inter-dielectric (ILD) pads forming an ILD cheesing pattern thereon, to direct current. The IC interconnect structure further includes a second via positioned in a dielectric formed over the buffer metal segment and coupled to the buffer metal segment at one end and a metal power line formed in a dielectric and coupled to the second via at an opposite end thereof. The use of the ILD pads on the buffer metal segment enables a more even distribution of current along the metal power line. |
申请公布号 |
US2012264289(A1) |
申请公布日期 |
2012.10.18 |
申请号 |
US201213531015 |
申请日期 |
2012.06.22 |
申请人 |
DING HANYI;FILIPPI RONALD G.;GUO JONG-RU;WANG PING-CHUAN;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DING HANYI;FILIPPI RONALD G.;GUO JONG-RU;WANG PING-CHUAN |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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