| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that, when a top emission type structure is employed, it is necessary to form an auxiliary wiring for a cathode, in which case, if a method of forming it by precise alignment mask evaporation after a cathode is deposited is used, although a voltage drop can be restricted, the need arises for a precise alignment mask evaporation process. <P>SOLUTION: The following steps are included: forming first electrodes isolated like islands on one surface side of a substrate, forming a barrier at least between the first electrodes, forming a conductive salient in contact with at least part of the barrier, forming a first organic functional layer inside the barrier, forming a second organic functional layer on one surface side of the substrate by letting part of the salient be exposed, and forming a light permeable second electrode on one surface side of the substrate by letting it abut on the salient. Because the salient is partly exposed and is contacted with the light permeable second electrode, an equivalent resistance value of the second electrode can be reduced. <P>COPYRIGHT: (C)2013,JPO&INPIT |
