| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve problems of low oxidation resistance and low wet etching resistance caused by use of a High-k insulation film and a metal electrode component as a gate stack material; the problems being caused because though it is important to reduce a distance between end parts of adjacent gates for microfabrication of a pattern, particularly in order to reduce a cell area of SRAM, it is hard in general to transfer a pattern in a single exposure by ArF in a 28 nm technology node, and accordingly, a microfabricated pattern is formed by repetition of exposure, etching, and the like a plurality of times. <P>SOLUTION: According to the present invention, in patterning of a multilayer gate film having a high-k gate insulation film and a metal electrode film in a memory region, first, etching of a cutting region between adjacent gate electrodes is performed by using a first resist film, and after the unnecessary first resist film is removed, etching of a line-and-space pattern by using a second resist film is performed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
