发明名称 |
RESIST COMPOSITION FOR NEGATIVE DEVELOPMENT AND METHOD OF FORMING RESIST PATTERN |
摘要 |
A resist composition for negative development including a base component (A) which exhibits decreased solubility in an organic solvent under the action of acid and an acid generator component (B) which generates acid upon exposure; and the resist composition used in a method of forming a resist pattern which includes: forming a resist film on a substrate using the resist composition; conducting exposure of the resist film; and patterning the resist film by negative development using a developing solution containing the organic solvent to form a resist pattern, wherein the acid generator component (B) contains an acid generator (B1) that generates an acid having a log P value of 2.7 or less and also a pKa value of at least−3.5.
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申请公布号 |
US2012264058(A1) |
申请公布日期 |
2012.10.18 |
申请号 |
US201213440090 |
申请日期 |
2012.04.05 |
申请人 |
UTSUMI YOSHIYUKI;SHIMIZU HIROAKI;TOKYO OHKA KOGYO CO., LTD. |
发明人 |
UTSUMI YOSHIYUKI;SHIMIZU HIROAKI |
分类号 |
G03F7/027;G03F7/004;G03F7/20 |
主分类号 |
G03F7/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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