发明名称 |
SENSING SCHEME IN A MEMORY DEVICE |
摘要 |
Methods of operating memory devices, generating reference currents in memory devices, and sensing data states of memory cells in a memory device are disclosed. One such method includes generating reference currents utilized in sense amplifier circuitry to manage leakage currents while performing a sense operation within a memory device. Another such method activates one of two serially coupled transistors along with activating and deactivating the second transistor serially coupled with the first transistor thereby regulating a current through both serially coupled transistors and establishing a particular reference current. |
申请公布号 |
US2012262993(A1) |
申请公布日期 |
2012.10.18 |
申请号 |
US201113085611 |
申请日期 |
2011.04.13 |
申请人 |
MOSCHIANO VIOLANTE;SANTIN GIOVANNI;VALI TOMMASO;MICRON TECHNOLOGY, INC. |
发明人 |
MOSCHIANO VIOLANTE;SANTIN GIOVANNI;VALI TOMMASO |
分类号 |
G11C16/06;G11C16/04;H03F3/45 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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