发明名称 |
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SYSTEM OF PROCESSING SUBSTRATE |
摘要 |
Disclosed is a semiconductor device that comprises a gate insulating film formed on a semiconductor substrate; a first conductive metal-containing film formed on the gate insulating film; a second conductive metal-containing film, formed on the first metal-containing film, to which aluminum is added; and a silicon film formed on the second metal-containing film.
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申请公布号 |
US2012261773(A1) |
申请公布日期 |
2012.10.18 |
申请号 |
US201213425437 |
申请日期 |
2012.03.21 |
申请人 |
OGAWA ARITO;HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
OGAWA ARITO |
分类号 |
H01L29/78;C23C16/455;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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