| 摘要 |
This silicon carbide semiconductor device (100) is provided with a silicon carbide layer (110), a reaction layer (120) that comes into contact with the silicon carbide layer (110), a conductive oxidation layer (130) that comes into contact with the reaction layer (120), and an electrode layer (140) formed above the reaction layer (120) with the conductive oxidation layer (130) therebetween. Preferably, the thickness of the conductive oxidation layer (130) is between 0.3 nm and 2.25 nm. With this silicon carbide semiconductor device (100), it is possible to reduce the contact resistance between a semiconductor base and the electrode layer even further by forming the electrode layer (140) above the reaction layer (120) with the conductive oxidation layer (130) therebetween instead of directly forming the electrode layer (140) on the reaction layer (120). Moreover, with this silicon carbide semiconductor device (100), it is possible to reduce the contact resistance between a semiconductor base and the electrode layer even further because the thickness of the conductive oxidation layer (130) is between 0.3 nm and 2.25 nm. |
