| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ceramic substrate that improves the yield of the process of etching a metal film (first metal layer, second metal layer) on the ceramic substrate. <P>SOLUTION: The ceramic substrate includes: a ceramic part 2; and a plating suppression layer 3 on at least one surface of the ceramic part 2 in which at least one metal selected from bismuth (Bi), cadmium (Cd), tin (Sn), and zinc (Zn) is diffused. In the formation of a first metal layer 7, the at least one metal selected from bismuth (Bi), cadmium (Cd), tin (Sn), and zinc (Zn) can act as a catalyst poison to suppress growth of the component of the first metal layer 7 deep from the surface of the ceramic part 2, which can facilitate etching removal of the metal film (especially, first metal layer 7) to whereby improve the yield of the process of etching the metal film (first metal layer 7, second metal layer 8) on the ceramic substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT |
