| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having excellent switching characteristics while reducing the size of a transistor. <P>SOLUTION: A semiconductor device comprises: a gate electrode including a pair of first protrusions and a second protrusion provided between the pair of first protrusions; a gate insulation film covering the gate electrode; a semiconductor film provided in contact with the gate insulation film and overlapping with the pair of first protrusions and the second protrusion; and a pair of electrodes provided in contact with the semiconductor film and overlapping with the pair of first protrusions. Side ends of the semiconductor film exist beyond top faces of the pair of first protrusions in a channel width direction of the semiconductor film. Side ends of the pair of electrodes exist beyond the top faces of the pair of first protrusions in the channel width direction of the semiconductor film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
