| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method including a step of grinding a rear face of a semiconductor substrate by which an element having a soft recovery characteristic can be produced. <P>SOLUTION: A P-anode layer 2 and an anode electrode 3 are formed on one principal surface of an N-type semiconductor substrate 1, and then, the one principal surface is irradiated with an electron beam to introduce crystal defects in the semiconductor substrate 1. Next, the other principal surface of the semiconductor substrate 1 is ground and thinned, and ion implantation of phosphor is performed to the semiconductor substrate 1 from a surface exposed by the grinding. Next, the implantation surface is irradiated with a YAG laser by the double pulse method to activate phosphor implanted in the semiconductor substrate 1 electrically, and the crystal defects in a region from the irradiation surface of laser light to a depth corresponding to 5-30% of a thickness of the whole thinned wafer are recovered, thus the soft recovery is achieved. <P>COPYRIGHT: (C)2013,JPO&INPIT |
