| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicon wafer heat treatment method which can considerably reduce void defect of a surface layer part of a wafer, and improve oxygen concentration of the surface layer part, suppress deterioration of surface roughness of a polished surface, and improve productivity in an RTP. <P>SOLUTION: The silicon wafer heat treatment method includes the step of terminating by hydrogen the silicon atom of a surface of a silicon wafer in which the surface having at least a semiconductor device formed thereon has been subjected to mirror polishing; the step of terminating by fluorine the silicon atom of the surface of the hydrogen-terminated silicon wafer; and the step of performing a rapid temperature increase/decrease heat treatment in which after the temperature of the hydrogen- and fluorine-terminated silicon wafer is rapidly increased and held in a temperature range of not less than 1300°C nor more than 1400°C in an inert gas atmosphere, the temperature thereof is further held by changing the inert gas atmosphere to an oxidizing gas atmosphere in the temperature range, and is then rapidly decreased. <P>COPYRIGHT: (C)2013,JPO&INPIT |
