| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a fabrication method of a semiconductor element capable of processing a shape of different etching depth easily in the same wafer surface. <P>SOLUTION: The fabrication method of a semiconductor element includes: a first step for forming, on the surface of a semiconductor 1801, a mask 1900 having apertures 1902, 1903, 1904 where the aperture width is set so that only one of the first state of progressing the etching of the semiconductor surface or the second state of producing a polymer on the semiconductor surface is expressed for each region of different aperture width, and for forming a peripheral mask having a peripheral window for controlling the concentration of hydrogen plasma supplied to the aperture of the mask 1900 on the periphery thereof; and a second step for irradiating the semiconductor surface where the mask is formed with methane plasma and hydrogen plasma. <P>COPYRIGHT: (C)2013,JPO&INPIT |
