| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device allowing enhancement of an aperture ratio and improvement of sensitivity. <P>SOLUTION: A solid-state imaging device comprises a semiconductor substrate 103 in which an imaging region having a plurality of pixels arranged in a matrix are formed, and a first wiring layer (at the imaging region side) 105a and a second wiring layer 105b that are formed on the imaging region. Photodiodes PD, transfer transistors TG, floating diffusions FD, reset transistors RS, and amplifier transistors SF are formed in the imaging region. Row-direction wiring extending in the row direction between the adjacent pixels and column-direction wiring extending in the column direction between the adjacent pixels are one or less at the center of the pixels in the second wiring layer 105b. <P>COPYRIGHT: (C)2013,JPO&INPIT |
