发明名称 SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF
摘要 The circuit includes a first wiring for supplying a power supply potential to a signal processing circuit, a transistor for controlling electrical connection between the first wiring and a second wiring for supplying the a power supply potential, and a transistor for determining whether or not the first wiring is grounded. At least one of the two transistors is a transistor whose channel is formed in the oxide semiconductor layer. This makes it possible to reduce power consumption due to cutoff current of at least one of the two transistors.
申请公布号 US2012262983(A1) 申请公布日期 2012.10.18
申请号 US201213442995 申请日期 2012.04.10
申请人 KOBAYASHI HIDETOMO;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KOBAYASHI HIDETOMO
分类号 G11C11/40;G05F1/10 主分类号 G11C11/40
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