发明名称 |
METHODS OF FORMING STRUCTURES HAVING NANOTUBES EXTENDING BETWEEN OPPOSING ELECTRODES AND STRUCTURES INCLUDING SAME |
摘要 |
A semiconductor structure including nanotubes forming an electrical connection between electrodes is disclosed. The semiconductor structure may include an open volume defined by a lower surface of an electrically insulative material and sidewalls of at least a portion of each of a dielectric material and opposing electrodes. The nanotubes may extend between the opposing electrodes, forming a physical and electrical connection therebetween. The nanotubes may be encapsulated within the open volume in the semiconductor structure. A semiconductor structure including nanotubes forming an electrical connection between source and drain regions is also disclosed. The semiconductor structure may include at least one semiconducting carbon nanotube electrically connected to a source and a drain, a dielectric material disposed over the at least one semiconducting carbon nanotube and a gate dielectric overlying a portion of the dielectric material. Methods of forming the semiconductor structures are also disclosed. |
申请公布号 |
US2012261647(A1) |
申请公布日期 |
2012.10.18 |
申请号 |
US201213528342 |
申请日期 |
2012.06.20 |
申请人 |
MARSH EUGENE P.;SANDHU GURTEJ S.;MICRON TECHNOLOGY, INC. |
发明人 |
MARSH EUGENE P.;SANDHU GURTEJ S. |
分类号 |
H01L21/20;B82Y40/00;B82Y99/00;H01L29/775 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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