发明名称 QUARTZ GLASS CRUCIBLE, METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL
摘要 <p>The present invention is a method for producing a quartz glass crucible including the steps of: preparing a substrate for a crucible made of quartz glass and having a crucible shape, producing a synthetic quartz glass material by a direct method or a soot method; processing the synthetic quartz glass material into a crucible shape without pulverizing it; and using heat treatment to bond the inner wall of the substrate for a crucible to the exterior wall of the synthetic quartz glass material processed into a crucible shape, via a silica powder. Provided are a quartz glass crucible capable of avoiding dislocation of a silicon single crystal during production of the silicon single crystal, having high heat resistance, and suppressing decrease of productivity and yield, a method for producing the same, and a method for producing a silicon single crystal using the quartz glass crucible.</p>
申请公布号 WO2012140816(A1) 申请公布日期 2012.10.18
申请号 WO2012JP00975 申请日期 2012.02.15
申请人 SHIN-ETSU HANDOTAI CO.,LTD.;KIMURA, AKIHIRO;HOSHI, RYOJI;MITAMURA, NOBUAKI;KAMADA, HIROYUKI 发明人 KIMURA, AKIHIRO;HOSHI, RYOJI;MITAMURA, NOBUAKI;KAMADA, HIROYUKI
分类号 C03B20/00;C30B15/10;C30B29/06 主分类号 C03B20/00
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