发明名称 |
QUARTZ GLASS CRUCIBLE, METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING SILICON SINGLE CRYSTAL |
摘要 |
<p>The present invention is a method for producing a quartz glass crucible including the steps of: preparing a substrate for a crucible made of quartz glass and having a crucible shape, producing a synthetic quartz glass material by a direct method or a soot method; processing the synthetic quartz glass material into a crucible shape without pulverizing it; and using heat treatment to bond the inner wall of the substrate for a crucible to the exterior wall of the synthetic quartz glass material processed into a crucible shape, via a silica powder. Provided are a quartz glass crucible capable of avoiding dislocation of a silicon single crystal during production of the silicon single crystal, having high heat resistance, and suppressing decrease of productivity and yield, a method for producing the same, and a method for producing a silicon single crystal using the quartz glass crucible.</p> |
申请公布号 |
WO2012140816(A1) |
申请公布日期 |
2012.10.18 |
申请号 |
WO2012JP00975 |
申请日期 |
2012.02.15 |
申请人 |
SHIN-ETSU HANDOTAI CO.,LTD.;KIMURA, AKIHIRO;HOSHI, RYOJI;MITAMURA, NOBUAKI;KAMADA, HIROYUKI |
发明人 |
KIMURA, AKIHIRO;HOSHI, RYOJI;MITAMURA, NOBUAKI;KAMADA, HIROYUKI |
分类号 |
C03B20/00;C30B15/10;C30B29/06 |
主分类号 |
C03B20/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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