发明名称 |
PATTERNING PROCESS AND PHOTORESIST WITH A PHOTODEGRADABLE BASE |
摘要 |
A resist material and methods using the resist material are disclosed herein. An exemplary method includes forming a resist layer over a substrate, wherein the resist layer includes a polymer, a photoacid generator, an electron acceptor, and a photodegradable base; performing an exposure process that exposes portions of the resist layer with radiation, wherein the photodegradable base is depleted in the exposed portions of the resist layer during the exposure process; and performing an developing process on the resist layer.
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申请公布号 |
US2012264057(A1) |
申请公布日期 |
2012.10.18 |
申请号 |
US201213534961 |
申请日期 |
2012.06.27 |
申请人 |
WANG CHIEN-WEI;CHANG CHING-YU;GAU TSAI-SHENG;LIN BURN JEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WANG CHIEN-WEI;CHANG CHING-YU;GAU TSAI-SHENG;LIN BURN JEN |
分类号 |
G03F7/004;G03F7/027;G03F7/20 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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