| 摘要 |
Provided is a polishing pad, which alleviates the problem of scratching that occurs when conventional hard (dry) polishing pads are used, exhibits an excellent polishing rate and polishing uniformity, and can also be used for not only primary polishing but also final polishing, and also provided is a manufacturing method therefor. This polishing pad for polishing semiconductor devices includes a polishing layer that has polyurethane-polyurea resin foam containing generally spherical bubbles, and is characterized in that a spin-spin relaxation time (T2) of an M component for the polyurethane-polyurea resin foam is 160-260 µs, the storage modulus (E') of the polyurethane-polyurea resin foam is 1-30 MPa in tensile mode, at a temperature of 40°C, an initial load of 10g, a strain range of 0.01-4%, and a measurement frequency of 0.2 Hz, and the density (D) of the polyurethane-polyurea resin foam is in the range of 0.30-0.60 g/cm3. |
