| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device including a nanowire transistor with high performance and small variations, and to provide a manufacturing method thereof. <P>SOLUTION: A manufacturing method of a semiconductor device comprises: a step of forming a first insulating film on a semiconductor substrate; a step of forming a first semiconductor layer which is provided on the first insulating film, has a first region and second and third regions wider than the first region, and is configured so that at least any one of the second and third regions is connected to the first region and a mask provided on an upper surface of the first semiconductor layer; a step of implanting a first ion in a side surface of the first region of the first semiconductor layer using the mask; a step of performing first heat treatment after implanting the first ion; a step of forming a gate insulating film on at least a side surface of the first region of the first semiconductor layer after removing the mask; a step of forming a gate electrode on the gate insulating film; a step of forming a gate side wall of an insulator on side surfaces of the second and third regions of the gate electrode; and a step of implanting a second ion in at least the second and third regions of the first semiconductor layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
