| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern formation method with a high throughput. <P>SOLUTION: According a pattern formation method in an embodiment, a processed film is formed on a first substrate, and a self-organization material is selectively applied on a first region of the processed film. The self-organization material is phase-separated into plural components by baking, and any of the plural phase-separated components is removed to form a first pattern. Curable resin is applied on a second region of the processed film, and a second substrate having irregularities according to a desired pattern is brought into tight and close contact with and opposed to the curable resin, so as to harden the curable resin. By separating the second substrate from the curable resin, a second pattern on the curable resin is formed to process the processed film with the first and second patterns as masks. <P>COPYRIGHT: (C)2013,JPO&INPIT |
