发明名称 |
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF |
摘要 |
A semiconductor device including a first doped region of a first conductivity type, a second doped region of a second conductivity type, a gate, and a dielectric layer is provided. The first doped region is located in a substrate and has a trench. The second doped region is located at the bottom of the trench to separate the first doped region into a source doped region and a drain doped region. A channel region is located between the source doped region and the drain doped region. The gate is located in the trench. The dielectric layer covers the sidewall and the bottom of the trench and separates the gate and the substrate.
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申请公布号 |
US2012261739(A1) |
申请公布日期 |
2012.10.18 |
申请号 |
US201113088240 |
申请日期 |
2011.04.15 |
申请人 |
YANG I-CHEN;CHANG YAO-WEN;LU TAO-CHENG;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
YANG I-CHEN;CHANG YAO-WEN;LU TAO-CHENG |
分类号 |
H01L29/788;H01L21/336;H01L29/78 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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