发明名称 NONVOLATILE SEMICONDUCTOR MEMORY
摘要 <P>PROBLEM TO BE SOLVED: To determine a read failure after programming before a program operation ends. <P>SOLUTION: A nonvolatile semiconductor memory according to an embodiment is provided with: first means (steps ST1 to ST5) for repeating the application of a write pulse to a selected word line and the read operation during verification; second means (step ST6) for performing a read operation to a selected memory cell after it is determined by a verification circuit that the recording of program data is completed; and third means (step ST7) for outputting status information, which indicates that the program operation is passed, to an external controller when data which is read by the read operation, and the program data match with each other, and outputting status information, which indicates that the program operation is failed, to the external controller when both of them do not match with each other. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012198953(A) 申请公布日期 2012.10.18
申请号 JP20110061553 申请日期 2011.03.18
申请人 TOSHIBA CORP 发明人 FUJITA NORIHIRO
分类号 G11C16/02;G11C16/04 主分类号 G11C16/02
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