| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the following problem: the cleaning to a mask is performed for a long time in a past film-forming apparatus. <P>SOLUTION: The film-forming apparatus includes a deposition chamber, and the deposition chamber includes a means that generates plasma, the means that generates the plasma can include a mask disposed in the deposition chamber as an electrode, applies a high-frequency electric field to the mask, and excites the introduced gas to the deposition chamber to generate the plasma. The plasma is generated by using one or two or more chosen from Ar, H, F, NF<SB POS="POST">3</SB>or O. <P>COPYRIGHT: (C)2013,JPO&INPIT |
