| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having high withstanding voltage and low on-resistance. <P>SOLUTION: A semiconductor device of an embodiment comprises a drift layer 1 of a first conductivity type, a first semiconductor layer 2 of the first conductivity type, a plurality of base layers 4 of a second conductivity type, a plurality of source layers 5 of the first conductivity type, a second semiconductor layer 3 and a gate electrode 7. The gate electrode includes a first part 7A and a second part 7B. The plurality of base layers include a first base layer 4A, a second base layer 4B adjacent to the first base layer 4A and a third base layer 4C adjacent to the first base layer in addition. The first part of the gate electrode extends in a first direction on the first semiconductor layer striding the first base layer and the second base layer. The second part of the gate electrode extends in a second direction on the first semiconductor layer striding the first base layer and the third base layer. The first part and the second part intersect at an intersection, and directly below the intersection, the second semiconductor layer reaching the drift layer is formed on a surface of the first semiconductor layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
