| 摘要 |
Efficiency of silicon photovoltaic solar cells is increased by an annealing process for immobilizing oxygen formed in Czochralski-grown silicon. The annealing process includes a short anneal in a rapid thermal annealing chamber at a high temperature, for example, greater than 1150° C. in an oxygen-containing ambient, More preferably, the wafer is rapidly cooled to less than 950° C. without an intermediate temperature hold, at which temperature oxygen does not nucleate and/or precipitate, Subsequent processing to form a photovoltaic structure is typically performed at relatively low temperatures of less than 1000° C. or even 875° C.
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