发明名称 MANUFACTURING METHOD FOR EXPOSURE MASK, GENERATING METHOD FOR MASK SUBSTRATE INFORMATION, MASK SUBSTRATE, EXPOSURE MASK, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND SERVER
摘要 There is disclosed a manufacturing method for exposure mask, which comprises acquiring a first information showing surface shape of surface of each of a plurality of mask substrates, and a second information showing the flatness of the surface of each of mask substrates before and after chucked on a mask stage of an exposure apparatus, forming a corresponding relation of each mask substrate, the first information and the second information, selecting the second information showing a desired flatness among the second information of the corresponding relation, and preparing another mask substrate having the same surface shape as the surface shape indicated by the first information in the corresponding relation with the selected second information, and forming a desired pattern on the above-mentioned another mask substrate.
申请公布号 US2012264067(A1) 申请公布日期 2012.10.18
申请号 US201213525712 申请日期 2012.06.18
申请人 ITOH MASAMITSU;KABUSHIKI KAISHA TOSHIBA 发明人 ITOH MASAMITSU
分类号 G03F7/20;G03B27/42;G03C5/00;G03F1/14;G03F9/00;H01L21/00;H01L21/76 主分类号 G03F7/20
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