| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a heat treatment method and a heat treatment apparatus which can prevent the occurrence of a process damage, while suppressing diffusion of an implanted impurity. <P>SOLUTION: A surface temperature of a semiconductor wafer into which impurities are implanted, is raised from a pre-heating temperature T1 to a target temperature T2 over a period of time from 1 to 20 milliseconds by performing a first irradiation in which light-emission output of a flashlamp is increased up to a maximal value over a period of time from 1 to 20 milliseconds. Thereby the activation of the impurity is attained. Then the surface temperature of the semiconductor wafer W is kept within a range of a variation width of ±25°C from the target temperature T2 for 3 to 50 milliseconds by performing a second irradiation in which light-emission output of the flashlamp gradually decreases from the maximal value over a period of time from 3 to 50 milliseconds. Thereby the occurrence of the process damage can be prevented, while suppressing diffusion of the impurity. <P>COPYRIGHT: (C)2013,JPO&INPIT |
