METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of increasing a quantity of carbon existing at a lattice position in a region that adds distortion to a channel region.

SOLUTION: The method includes the following steps of: forming extension regions 7s and 7d and pocket regions 8s and 8d on both sides of a gate electrode 5 in a semiconductor substrate; forming a sidewall 9 to a lateral face of the gate electrode 5; etching a region exposed from the sidewall 9 and the gate electrode 5 in the semiconductor substrate 1 to form recessed parts 1s and 1d; forming semiconductor layers 11s and 11d including a third impurity in the recessed parts 1s and 1d; activating the third impurity by first heat treatment to form source/drain regions 11s and 11d to both lateral parts of the gate electrode 5; performing ion implantation of a fourth impurity containing carbon into the semiconductor layers 11s and 11d to transform the semiconductor layer 11s and 11d to amorphous regions 13s and 13d; and enhancing a binding property of carbon at a lattice position of crystal in the amorphous regions 13s and 13d by second heat treatment to form distortion generation regions 14s and 14d to both lateral parts of the gate electrode 5.

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