发明名称 Thin Film Deposition via a Spatially-Coordinated and Time-Synchronized Process
摘要 A system and process for the formation of thin film materials. The process includes forming a plasma from a first material stream and allowing the plasma to evolve in space and/or time to extinguish species that are detrimental to the quality of the thin film material. After the plasma evolves to an optimum state, a second material stream is injected into the deposition chamber to form a composite plasma that contains a distribution of species more conducive to formation of a high quality thin film material. The system includes a deposition chamber having a plurality of delivery points for injecting two or more streams into a plasma region. The delivery points are staggered in space to permit an upstream plasma formed from a first material stream deposition source material to evolve before combining a downstream material stream with the plasma.
申请公布号 US2012263886(A1) 申请公布日期 2012.10.18
申请号 US201213459198 申请日期 2012.04.29
申请人 OVSHINSKY STANFORD R. 发明人 OVSHINSKY STANFORD R.
分类号 C23C16/50;C23C16/505;C23C16/511 主分类号 C23C16/50
代理机构 代理人
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