SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

A high-k gate insulating film and metal gate electrode are introduced into a MISFET with 32 nm technology or later nodes. In this case, there is a problem with increases in the absolute value of the threshold voltage for an n-MISFET and p-MISFET because of high temperature heat treatment afterwards. Therefore, various types of threshold voltage adjusting metal films and the like are formed on high-k gate insulating films, and the threshold voltage is controlled by introducing these film components therefrom to the high-k gate insulating film. However, the present inventors and others have made it clear that lanthanum and the like introduced into high-k gate insulating films in n-MISFETs have the problem of easily migrating into STI regions because of heat treatment thereafter. The present invention provides an N channel threshold value adjusting element outward diffusion preventing region in the lower part of n-MISFET gate stacks and surface parts of peripheral element isolation regions in a semiconductor integrated circuit device.