发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A semiconductor device is provided. A multi-component high-k interface layer containing elements of the substrate is formed from an ultra-thin high-k dielectric material in a single-layer structure of atoms by rapid annealing in the manufacturing of a CMOS transistor by the replacement gate process, and a high-k gate dielectric layer with a higher dielectric constant and a metal gate layer are formed thereon. The EOT of the device is effectively decreased, and the diffusion of atoms in the high-k gate dielectric layer from an upper level thereof is effectively prevented by the optimized high-k interface layer at high-temperature treatment.
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申请公布号 |
US2012261761(A1) |
申请公布日期 |
2012.10.18 |
申请号 |
US201213517893 |
申请日期 |
2012.06.14 |
申请人 |
WANG WENWU;HAN KAI;CHEN SHIJIE;WANG XIAOLEI;CHEN DAPENG;INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OFSCIENCES |
发明人 |
WANG WENWU;HAN KAI;CHEN SHIJIE;WANG XIAOLEI;CHEN DAPENG |
分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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