PROGRAMMABLE ARRAY OF SILICON NANOWIRE METAL-OXIDE-SILICON FIELD EFFECT TRANSISTOR DEVICE AND PREPARATION METHOD THEREFOR

摘要

Provided are a hexagonal programmable array of a silicon nanowire metal-oxide-silicon field effect transistor and a preparation method therefor. The array includes a nanowire device, a nanowire device connection area and a gate connection area, wherein the nanowire device has a cylindrical structure and includes a silicon nanowire channel, a gate dielectric layer and a gate area, with the gate dielectric layer wrapping the silicon nanowire channel and the gate area wrapping the gate dielectric layer, and the nanowire devices are arranged hexagonally so as to form a unit, with the nanowire device connection area being a connection node among three nanowire devices and fixed on a silicon support. The present invention can realize complicated interconnected control logic, and suitable for being applied in high speed and highly integrated digital/analogue circuits and digital and analogue hybrid circuits.