摘要 |
The present invention is provided with a lattice-shaped array (A1) in which a plurality of parallel light emitting diode circuits, in which rod-like structured light emitting diodes (D) are connected in parallel, are connected in series and the rod-like structured light emitting diodes (D) are arranged in a lattice, a first electrode (11) connected to one end of the lattice-shaped array (A1), and a second electrode (12) connected to the other end of the lattice-shaped array. The rod-like structured light emitting diodes (D) have semiconductor core formed from rod-shaped n type GaN with a ratio of length to diameter of 5 - 200 and a diameter of 500 nm - 100 µm and a semiconductor layer formed from cylindrical p type GaN that surrounds that semiconductor core. Thus, a light emitting device in which variations in light emitting characteristics are suppressed and which has a good yield is provided using minute rod-like structured light emitting diodes. |
申请人 |
SHARP KABUSHIKI KAISHA;YAOI, YOSHIFUMI;NEGISHI, TETSU;KOMIYA, KENJI;SHIOMI, TAKESHI;SHIBATA, AKIHIDE;IWATA, HIROSHI;TAKAHASHI, AKIRA |
发明人 |
YAOI, YOSHIFUMI;NEGISHI, TETSU;KOMIYA, KENJI;SHIOMI, TAKESHI;SHIBATA, AKIHIDE;IWATA, HIROSHI;TAKAHASHI, AKIRA |