发明名称 |
SPUTTERING TARGET FOR SOLAR CELL |
摘要 |
This sputtering target for solar cells is characterized in being formed by bonding together a backing plate and a target material using an indium-tin alloy bonding material or an indium-gallium alloy bonding material, said target material being obtained by making the thickness of an indium ingot 70 % of the original thickness thereof or less by processing the ingot by applying physical stress thereto. This sputtering target for solar cells has a high sputter rate at the sputter initial stage, a small sputter rate reduction with time, and can form an indium film having more uniform qualities. Namely, the high-rate formation of the film having the uniform qualities can be expected until the end of the service-life.
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申请公布号 |
WO2012140928(A1) |
申请公布日期 |
2012.10.18 |
申请号 |
WO2012JP51083 |
申请日期 |
2012.01.19 |
申请人 |
MITSUI MINING & SMELTING CO., LTD.;TAKEUCHI, TOMOYA |
发明人 |
TAKEUCHI, TOMOYA |
分类号 |
C23C14/34;B23K35/26;C22C13/00;C22C28/00;C22F1/00;C22F1/16 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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