发明名称 SPUTTERING TARGET FOR SOLAR CELL
摘要 This sputtering target for solar cells is characterized in being formed by bonding together a backing plate and a target material using an indium-tin alloy bonding material or an indium-gallium alloy bonding material, said target material being obtained by making the thickness of an indium ingot 70 % of the original thickness thereof or less by processing the ingot by applying physical stress thereto. This sputtering target for solar cells has a high sputter rate at the sputter initial stage, a small sputter rate reduction with time, and can form an indium film having more uniform qualities. Namely, the high-rate formation of the film having the uniform qualities can be expected until the end of the service-life.
申请公布号 WO2012140928(A1) 申请公布日期 2012.10.18
申请号 WO2012JP51083 申请日期 2012.01.19
申请人 MITSUI MINING & SMELTING CO., LTD.;TAKEUCHI, TOMOYA 发明人 TAKEUCHI, TOMOYA
分类号 C23C14/34;B23K35/26;C22C13/00;C22C28/00;C22F1/00;C22F1/16 主分类号 C23C14/34
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