| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an inertial sensor that reduces characteristic fluctuation of QV amplifiers and is easily miniaturized. <P>SOLUTION: A gyro sensor 1 (one example of an inertial sensor) includes a signal processing IC 10 and a sensor element 20. The signal processing IC 10 is formed with an integrated circuit and electrodes on a first surface 11A of a semiconductor substrate 11. The sensor element 20 has a vibration part and is formed with electrodes on a surface facing the first surface 11A of the semiconductor substrate 11. One or a plurality of rearrangement wirings 30 are provided facing the first surface 11A of the semiconductor substrate 11, and at least one of the rearrangement wirings 30 electrically connects the electrodes formed on the semiconductor substrate 11 and the electrodes formed on the sensor element 20. QV amplifiers 110, 120, to which a detection signal of the sensor element 20 is input, are arranged so as not to overlap the vibration part of the sensor element 20 in a planar view viewed from a direction orthogonal to the first surface 11A of the semiconductor substrate 11. <P>COPYRIGHT: (C)2013,JPO&INPIT |
