| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor element capable of preventing mutual diffusion of a low melting metal and Si of a Si substrate on a rear surface of the Si substrate while forming a silicide layer on a surface of the Si substrate. <P>SOLUTION: A manufacturing method of a semiconductor element includes: a step of forming a low melting metal on a rear surface of a Si substrate; a step of forming a high melting metal layer on a surface of the Si substrate; a step of forming a laser adsorption layer on the high melting metal layer; a step of forming a silicide layer on an interface between the laser adsorption layer and the high melting metal layer and an interface between the high melting metal layer and the Si substrate while keeping a temperature of the low melting point metal low by preventing the mutual diffusion of the low melting metal and the Si of the Si substrate by irradiating the laser adsorption layer with laser light; and a step of etching the laser adsorption layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
