| 发明名称 |
PHOTO DETECTOR CONSISTING OF TUNNELING FIELD-EFFECT TRANSISTORS AND THE MANUFACTURING METHOD THEREOF |
| 摘要 |
The present invention belongs to the technical field of optical interconnection and relates to a photo detector, in particular to a photo detector consisting of tunneling field-effect transistors.
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| 申请公布号 |
US2012261669(A1) |
申请公布日期 |
2012.10.18 |
| 申请号 |
US201213446834 |
申请日期 |
2012.04.13 |
| 申请人 |
FUDAN UNIVERSITY |
发明人 |
WANG PENGFEI;LIN XI;WANG WEI;LIU XIAOYONG;ZHANG WEI |
| 分类号 |
H01L31/0368;H01L31/0232;H01L31/18 |
主分类号 |
H01L31/0368 |
| 代理机构 |
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