发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
The semiconductor device according to one embodiment of the present invention includes: a semiconductor substrate; and a first area and a second area which are respectively provided on the semiconductor substrate. The first area includes: a first metal wiring formed in a first wiring layer above the semiconductor substrate and having a certain first width; a second metal wiring formed in a second wiring layer located in an upper layer of the first wiring layer and having the first width; and a first contact connecting the first metal wiring and the second metal wiring and having a second width equal to or less than the first width. The second area includes a third metal wiring having a film thickness from the first wiring layer to the second wiring layer and having a certain third width.
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申请公布号 |
US2012261749(A1) |
申请公布日期 |
2012.10.18 |
申请号 |
US201113236570 |
申请日期 |
2011.09.19 |
申请人 |
YAMADA MASAKI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
YAMADA MASAKI |
分类号 |
H01L29/78;H01L21/768;H01L23/498 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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