High-voltage vertical FET

摘要

A transistor includes a pillar (17) of semiconductor material arranged in a racetrack-shaped layout having a substantially linear section that extends in a first lateral direction and rounded sections at each end of the substantially linear section. First and second dielectric regions (15a,15b) are disposed on opposite sides of the pillar. First and second field plates (19a,19b) are respectively disposed in the first and second dielectric regions. First and second gate members (18a,18b) respectively disposed in the first and second dielectric regions are separated from the pillar by a gate oxide having a first thickness in the substantially linear section. The gate oxide is substantially thicker at the rounded sections.