发明名称 |
Method of manufacturing a photomask |
摘要 |
A photomask is manufactured from a photomask blank comprising a transparent substrate and a light-shielding film consisting of upper and lower layers of transition metal-containing silicon base materials, the content of O+N in the upper layer being higher than that of the lower layer. The light-shielding film is processed in two steps by fluorine dry etching through a resist pattern such that a lower portion of the film is left behind, and oxygen-containing chlorine dry etching for removing the remainder of the film. |
申请公布号 |
EP2261736(A3) |
申请公布日期 |
2012.10.17 |
申请号 |
EP20100251082 |
申请日期 |
2010.06.11 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
IGARASHI, SHINICHI;INAZUKI, YUKIO;KANEKO, HIDEO;YOSHIKAWA, HIROKI;KINASE, YOSHINORI |
分类号 |
G03F1/00;G03F1/54;H01L21/027 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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