发明名称 NANOWIRE SENSOR, NANOWIRE SENSOR ARRAY AND METHOD OF FABRICATING THE SAME
摘要 <p>A method of fabricating a sensor comprising a nanowire on a support substrate with a first semiconductor layer arranged on the support substrate is disclosed. The method comprises forming a fin structure from the first semiconductor layer, the fin structure comprising at least two supporting portions and a fin portion arranged there between; oxidizing at least the fin portion of the fin structure thereby forming the nanowire being surrounded by a first layer of oxide; and forming an insulating layer above the supporting portions; wherein the supporting portions and the first insulating layer form a microfluidic channel. A nanowire sensor is also disclosed. The nanowire sensor comprises a support substrate, a semiconducting fin structure arranged on the support substrate, the fin structure comprising at least two semiconducting supporting portions and a nanowire arranged there between; and a first insulating layer on a contact surface of the supporting portions; wherein the supporting portions and the first insulating layer form a microfluidic channel.</p>
申请公布号 EP2049436(B1) 申请公布日期 2012.10.17
申请号 EP20060784252 申请日期 2006.08.11
申请人 AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH 发明人 AGARWAL, AJAY;SINGH, NAVAB;KUMAR, RAKESH;LAO, IENG KIN;BALASUBRAMANIAN, NARAYANAN
分类号 B01L3/00;C40B60/12 主分类号 B01L3/00
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