发明名称 |
QUANTUM-WELL-BASED SEMICONDUCTOR DEVICES |
摘要 |
<p>Quantum-well-based semiconductor devices and methods of forming quantum-well-based semiconductor devices are described. A method includes providing a hetero-structure disposed above a substrate and including a quantum-well channel region. The method also includes forming a source and drain material region above the quantum-well channel region. The method also includes forming a trench in the source and drain material region to provide a source region separated from a drain region. The method also includes forming a gate dielectric layer in the trench, between the source and drain regions; and forming a gate electrode in the trench, above the gate dielectric layer.</p> |
申请公布号 |
EP2510547(A2) |
申请公布日期 |
2012.10.17 |
申请号 |
EP20100836369 |
申请日期 |
2010.10.19 |
申请人 |
INTEL CORPORATION |
发明人 |
DEWEY, GILBERT;CHAU, ROBERT S.;RADOSAVLJEVIC, MARKO;METZ, MATTHEW V.;PILLARISETTY, RAVI |
分类号 |
H01L29/78;H01L21/336;H01L29/20;H01L29/423;H01L29/66;H01L29/778 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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