Methods of forming electrical interconnect structures using polymer residues to increase etching selectivity through dielectric layers,申请号KR20070086749-传众专利搜索

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发明名称	Methods of forming electrical interconnect structures using polymer residues to increase etching selectivity through dielectric layers
摘要
申请公布号	KR101192410(B1)	申请公布日期	2012.10.17
申请号	KR20070086749	申请日期	2007.08.28
申请人		发明人
分类号	H01L21/28	主分类号	H01L21/28
代理机构		代理人
主权项
地址

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